35 research outputs found

    An Authentication and Key Establishment Scheme for the IP-Based Wireless Sensor Networks

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    Integration between wireless sensor networks and traditional IP networks using the IPv6 and 6LoWPAN standards is a very active research and application area. A combination of hybrid network significantly increases the complexity of addressing connectivity and fault tolerance problems in a highly heterogeneous environment, including for example different packet sizes in different networks. In such challenging conditions, securing the communication between nodes with very diverse computational, memory and energy storage resources is at the same time an essential requirement and a very complex issue. In this paper we present an efficient and secure mutual authentication and key establishment protocol based on Elliptic Curve Cryptography (ECC) by which different classes of nodes, with very different capabilities, can authenticate each other and establish a secret key for secure communication. The analysis of the proposed scheme shows that it provides good network connectivity and resilience against some well known attacks

    Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication

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    Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping

    User-informed marketing versus standard description to drive demand for evidence-based therapy: A randomized controlled trial.

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    Direct-to-consumer (DTC) marketing represents a vital strategy to disseminate evidence-based therapies (EBTs). This 3-phase research program, informed by the marketing mix, developed and evaluated user-informed DTC materials for parents concerned about adolescent substance use (SU). Phases 1 and 2 consisted of qualitative interviews (n = 29 parents) and a quantitative survey (n = 411), respectively, to elicit parents’ preferred terms and strategies to disseminate EBT. Building upon prior phases, the current study (Phase 3) developed a user-informed infographic (128 words, 7th-grade level) focused on SU therapy. Parents were randomly assigned to view the user-informed infographic (n = 75) or a standard EBT description (n = 77) from the American Psychological Association (529 words, 12th-grade level). Logistic regressions examined the effect of marketing condition on parent-reported behavioral intentions and actual requests for EBT information, controlling for correlates of parent preferences in Phase 2 (parent education level; adolescent internalizing, externalizing, legal, and SU problems). Counter to hypotheses, condition did not have a main effect on either outcome. However, there was a significant interaction between condition and adolescent SU problems: among parents whose adolescents had SU problems, the user-informed infographic predicted 3.7 times higher odds of requesting EBT information than the standard description. Additionally, parents whose adolescents had legal problems were more likely to request EBT information than parents whose adolescents did not. The infographic was 4 times shorter and written at 5 grade levels lower, thereby providing a highly disseminable alternative. Findings highlight the value of specificity in DTC marketing, while advancing methods to create tailored marketing materials and communicate knowledge about psychological science

    Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

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    This work investigates the role of threading dislocation densities (TDD) in the low density regime on the vertical transport in Si0.06Ge0.94 heterostructures integrated on Si(001). The use of unintentionally doped Si0.06Ge0.94 layers enables the study of the impact of grown-in threading dislocations (TD) without interaction with processing-induced defects originating, e.g., from dopant implantation. The studied heterolayers, while equal in composition, the degree of strain relaxation, and the thickness feature three different values for the TDD as 3 × 106, 9 × 106, and 2 × 107 cm−2. Current–voltage measurements reveal that leakage currents do not scale linearly with TDD. The temperature dependence of the leakage currents suggests a strong contribution of field-enhanced carrier generation to the current transport with the trap-assisted tunneling via TD-induced defect states identified as the dominant transport mechanism at room temperature. At lower temperatures and at high electric fields, direct band-to-band tunneling without direct interactions with defect levels becomes the dominating type of transport. Leakage currents related to emission from mid-gap traps by the Shockley–Read–Hall (SRH) generation are observed at higher temperatures (>100 °C). Here, we see a reduced contribution coming from SRH in our material, featuring the minimal TDD (3 × 106 cm−2), which we attribute to a reduction in point defect clusters trapped in the TD strain fields

    Effect of left ventricular hypertrophy on long-term survival of patients with coronary artery disease following percutaneous coronary intervention

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    The impact of left ventricular hypertrophy (LVH) on survival among patients with established coronary artery disease (CAD) is not well understood. We sought to evaluate the effect of LVH on the survival of patients with CAD following percutaneous coronary intervention (PCI). Three hospitals in New York City contributed prospectively defined data on 4284 consecutive patients undergoing PCI. Allcause mortality at a mean follow-up of three years was the primary endpoint. LVH was present in 383 patients (8.9%). LVH patients had a greater prevalence of hypertension (88% vs. 68%, p<0.001), vascular disease (21% vs. 6.6%, p=0.001), and prior heart failure (10% vs. 5.5%, p<0.001). LVH patients presented less often with one-vessel disease (38% vs. 50%, p=0.040) and more often with two- (34% vs. 29%, p=0.014) or three-vessel (22% vs. 18%, p=0.044) disease. Ejection fractions and angiographic success were similar in both groups. In-hospital mortality did not differ between groups. At three-year follow-up, the survival rate for patients with LVH was 86% vs. 91% in patients without LVH (log-rank p=0.001). However, after adjustment for differences in baseline characteristics using Cox proportional hazards analysis, LVH was found not to be an independent predictor of mortality (hazard ratio, 0.93; 95% confidence interval, 0.68–1.28; p=0.67). We conclude that LVH at the time of PCI is not independently associated with an increase in the hazard of death at three years

    Use of SMS texts for facilitating access to online alcohol interventions: a feasibility study

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    A41 Use of SMS texts for facilitating access to online alcohol interventions: a feasibility study In: Addiction Science & Clinical Practice 2017, 12(Suppl 1): A4

    Further results on GSM mobile station location

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    Accuracy of hyperbolic mobile station location in cellular networks

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